Part Number Hot Search : 
TC74LC 000X1 62400 RC10S04G HDT62SR 030406 1S1834Z ALVT1628
Product Description
Full Text Search
 

To Download ESDA6V8UW Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ESDA6V8UW will semiconductor ltd. 1 2013/08/07 - rev 4.0 ESDA6V8UW 4-lines, uni-directional, low capacitance transient voltage suppressors descriptions the ESDA6V8UW is a low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the ESDA6V8UW incorporates four pairs of low capacitance steering diodes plus a tvs diode. the ESDA6V8UW may be used to provide esd protection up to 8kv (contact discharge) according to iec61000-4-2, and withstand peak pulse current up to 3a (8/20 s) according to iec61000-4-5. the ESDA6V8UW is available in sot-363 package. standard products are pb-free and halogen-free. features ? reverse stand-off voltage: 5v max ? transient protection for each line according to iec61000-4-2 (esd): 8 kv (contact discharge) iec61000-4-5 (surge): 3a (8/20 s) ? low capacitance: c i/o - gnd = 0.70pf typ. c i/o ? i/o = 0.35pf typ. ? low leakage current ? low clamping voltage ? solid-state silicon technology applications ? usb 2.0 ? hdmi 1.3 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics ? notebooks http//:www.willsemi.com sot-363 circuit diagram * = month code (a~z) w = device code marking & pin configuration (top view) order information device package shipping ESDA6V8UW-6/tr sot-363 3000/tape&reel 6 4 5 3 1 2 i/o i/o vcc i/o i/o gnd w
ESDA6V8UW will semiconductor ltd. 2 2013/08/07 - rev 4.0 absolute maximum ratings electrical characteristics (t a = 25 o c, unless otherwise noted) definitions of electrical characteristics parameter symbol rating unit peak pulse power (t p = 8/20 s) p pk 45 w peak pulse current (t p = 8/20 s) i pp 3 a esd according to iec61000-4-2 air discharge v esd 15 kv esd according to iec61000-4-2 contact discharge 8 operation junction temperature t j 125 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c
ESDA6V8UW will semiconductor ltd. 3 2013/08/07 - rev 4.0 electrical characteristics (t a = 25 o c, unless otherwise noted) 1) according to iec61000-4-5. parameter symbol condition min. typ. max. unit reverse stand-off voltage v rwm 5 v reverse leakage current i r v rwm = 5v 1 a reverse breakdown voltage v br i br = 1ma 6.5 8.0 9.0 v forward voltage v f i f = 10ma 0.6 0.9 1.2 v clamping voltage 1) v cl i pp = 1a, t p = 8/20 s 11 v i pp = 3a, t p = 8/20 s 15 v junction capacitance c i/o - gnd v r = 0v, f = 1mhz, any i/o to gnd 0.70 0.90 pf c i/o ? i/o v r = 0v, f = 1mhz, any i/o to i/o 0.35 0.50 pf
ESDA6V8UW will semiconductor ltd. 4 2013/08/07 - rev 4.0 typical characteristics (t a = 25 o c, unless otherwise noted) 8/20 s waveform per iec61000-4-5 clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000-4-2 capacitance vs. reveres voltage power derating vs. ambient temperature 012345 0.5 0.6 0.7 0.8 vcc = floated, i/o to gnd f = 1mhz junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 01234 8 9 10 11 12 13 14 15 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t
ESDA6V8UW will semiconductor ltd. 5 2013/08/07 - rev 4.0 typical characteristics (t a = 25 o c, unless otherwise noted) esd clamping (+8kv contact discharge per iec61000-4-2) esd clamping (-8kv contact discharge per iec61000-4-2)
ESDA6V8UW will semiconductor ltd. 6 2013/08/07 - rev 4.0 package outline dimensions sot-363 recommend land pattern (unit: mm) note: this land pattern is for your reference only. symbol dimensions in millimeters min. typ. max. a 0.850 -- 1.050 a1 0.000 -- 0.100 a2 0.800 0.900 1.000 b 0.220 -- 0.290 c 0.115 -- 0.150 d 2.020 2.070 2.120 e 1.250 1.300 1.350 e1 2.200 2.300 2.400 e 0.650 bsc e1 1.300 bsc l 0.500 ref l1 0.280 0.330 0.380 0 o -- 8 o 0.85 1.85


▲Up To Search▲   

 
Price & Availability of ESDA6V8UW

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X